 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| v02.0404 MICROWAVE CORPORATION HMC347 Features High Isolation: >40 dB @ 20 GHz Low Insertion Loss: 1.6 dB @ 20 GHz Non-Reflective Design Small Size: 0.8 mm x 1.3 mm x 0.1 mm GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Typical Applications This switch is suitable DC - 20 GHz applications: * Fiber Optics * Microwave Radio * Military * Space * VSAT Functional Diagram General Description The HMC347 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 20 GHz, the switch offers high isolation and low insertion loss. The switch features over 50 dB isolation at lower frequencies and over 40 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines of -5/0V, requires no Vee and has no current consumption. The switch operates down to DC. The chip features coplanar I/Os that allow 100% RF testing prior to delivery to the customer. 7 SWITCHES - CHIP Electrical Specifications, TA = +25 C, With 0/-5V Control, 50 Ohm System Parameter Insertion Loss Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) "On State" "On State" Frequency DC - 20.0 GHz DC - 20.0 GHz DC - 20.0 GHz DC - 20.0 GHz 0.5 - 20.0 GHz 0.5 - 20.0 GHz 40 10 8 19 38 Min. Typ. 1.7 45 13 10 23 43 Max. 2.2 Units dB dB dB dB dBm dBm DC - 20.0 GHz 3 6 ns ns 7 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.0404 MICROWAVE CORPORATION HMC347 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz GaAs MMIC Insertion Loss 0 -1 INSERTION LOSS (dB) SUB-HARMONICALLY Isolation MIXER 17 - 25 GHz PUMPED 0 -10 -20 -30 -40 -50 -60 -70 RF1 RF2 -2 -3 +25C -55C +85C -4 -5 0 5 10 15 20 25 FREQUENCY (GHz) ISOLATION (dB) 0 5 10 15 20 25 FREQUENCY (GHz) Return Loss 0 RFC RF1,2 On RF1,2 Off 0.1 and 1 dB Input Compression Point 30 1 dB Compression Point 0.1 dB Compression Point 7 SWITCHES - CHIP 7 - 27 -5 RETURN LOSS (dB) -10 INPUT P1dB (dBm) 25 25 20 -15 15 -20 -25 0 5 10 15 20 FREQUENCY (GHz) 10 0 5 10 FREQUENCY (GHz) 15 20 Input Third Order Intercept Point 50 45 INPUT IP3 (dBm) 40 35 +25C -55C +85C 30 0 2 4 6 8 10 12 14 16 18 20 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0404 HMC347 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Truth Table Control Input A High Low B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON Control Voltages State Low High Bias Condition 0 to -0.2V @ 10 uA Max. -5V @ 10 uA Typ. to -7V @ 40 uA Max. Absolute Maximum Ratings RF Input Power (Vctl = -5V) Control Voltage Range (A & B) Channel Temperature Thermal Resistance (Insertion Loss Path) Thermal Resistance (Terminated Path) +27 dBm +0.5V to -7.5 Vdc 150 C 440 C/W 540 C/W -65 to +150 C -55 to +85 C 7 SWITCHES - CHIP Storage Temperature Pad Locations & Outline Drawing Operating Temperature NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 7 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0404 HMC347 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Suggested Driver Circuit Pad Descriptions Pad Number Function Description Interface Schematic 7 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if the RF line potential is not equal to 0V. 1, 4, 7 RFC, RF1, RF2 2, 5, 8, 10 CTRLA See truth table and control voltage table. 3, 6, 9 CTRLB See truth table and control voltage table. GND Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 - 29 SWITCHES - CHIP MICROWAVE CORPORATION v02.0404 HMC347 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Assembly Diagram 7 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs SWITCHES - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 7 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0404 HMC347 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 7 SWITCHES - CHIP 7 - 31 Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
Price & Availability of HMC347
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |